APT35GP120B2DF2

APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff www.DataSheet4U.com MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient 100 kHz operation @ 800V, 14A 50 kHz operation @ 800V, 25A RBSOA rated E C G E All Ratings: TC = 25°C unless otherwise specified. APT35GP120B2DF2 UNIT 1200 ±20 ±30 96 46 140 140A @ 960V 543 -55 to 150 300 Watts °C Amps Volts Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 25°C Reverse Bias Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 1200 3 4.5 3.3 3 500 2 6 3.9 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125°C) ...