POWER MOS 7 IGBT
APT35GP120J
1200V
POWER MOS 7 IGBT
G
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch...
Description
APT35GP120J
1200V
POWER MOS 7 IGBT
G
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
ISOTOP ®
®
E C
E
SO
2 T-
27
"UL Recognized"
Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff www.DataSheet4U.com
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
50 kHz operation @ 800V, 14A 20 kHz operation @ 800V, 25A RBSOA rated
G E C
All Ratings: TC = 25°C unless otherwise specified.
APT35GP120J UNIT
1200 ±20 ±30 64 29 140 140A @ 960V 284 -55 to 150 300
Watts °C Amps Volts
Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current
1
@ TC = 25°C
Reverse Bias Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT
1200 3 4.5 3.3 3 250
2
6 3.9
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I...
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