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APT35GN120BG Dataheets PDF



Part Number APT35GN120BG
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description IGBT
Datasheet APT35GN120BG DatasheetAPT35GN120BG Datasheet (PDF)

TYPICAL PERFORMANCE CURVES ® APT35GN120B APT35GN120BG* APT35GN120B(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliab.

  APT35GN120BG   APT35GN120BG



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TYPICAL PERFORMANCE CURVES ® APT35GN120B APT35GN120BG* APT35GN120B(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses. TO -2 47 G C E • • • • • 1200V NPT Field Stop Trench Gate: Low VCE(on) Easy Paralleling 10µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS www.DataSheet4U.com MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT35GN120B(G) UNIT Volts 1200 ±30 94 46 105 105A @ 1200V 379 -55 to 150 300 Amps @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX Units 1200 5 1.4 2 2 5.8 1.7 1.9 6.5 2.1 Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Volts I CES I GES RGINT 100 TBD 600 6 Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor nA Ω CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 050-7601 Rev C 10-2005 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) µA DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) td(off) f APT35GN120B(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 35A TJ = 150°C, R G = 2.2Ω 7, VGE = 15V, L = 100µH,VCE = 1200V TJ = 125°C, R G = 2.2Ω 7 VCC = 960V, VGE = 15V, VGE = 15V MIN TYP MAX UNIT pF V nC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 2500 150 120 9.5 220 15 130 105 10 24 22 300 55 TBD 2395 2315 24 22 365 100 TBD 3745 3435 µJ ns ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time T.


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