AP9962J

AP9962H/J Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface www.DataSheet4U.com Mount Package G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 40V 20mΩ 32A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9962J) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 40 ±20 32 20 150 34.7 0.27 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.5 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 201028031 AP9962H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA...