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C5353 Dataheets PDF



Part Number C5353
Manufacturers Toshiba
Logo Toshiba
Description Silicon NPN Transistor
Datasheet C5353 DatasheetC5353 Datasheet (PDF)

2SC5353 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5353 Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications Unit: mm • • Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max) High collectors breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junctio.

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2SC5353 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5353 Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications Unit: mm • • Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max) High collectors breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 900 800 7 3 5 1 2.0 25 150 www.DataSheet.co.kr Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― SC-67 2-10R1A −55 to 150 Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Datasheet pdf - http://www.DataSheet4U.net/ 2SC5353 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Test Condition VCB = 720 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.15 A IC = 1.2 A, IB = 0.24 A IC = 1.2 A, IB = 0.24 A Output 300 Ω Min ― ― 900 800 10 15 ― ― Typ. ― ― ― ― ― ― ― ― Max 100 10 ― ― ― ― 1.0 1.3 V V Unit μA μA V V Rise time tr IC IB1 IB2 ― ― 0.7 20 μs IB1 Switching time Storage time tstg Input IB2 ― ― 4.0 μs Fall time tf VCC ≈ 360 V IB1 = 0.24 A, IB2 = −0.48 A, duty cycle ≤ 1% ― ― 0.5 Marking www.DataSheet.co.kr C5353 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10 Datasheet pdf - http://www.DataSheet4U.net/ 2SC5353 IC – VCE Common emitter Tc = 25°C 3 Common emitter 1.0 VCE = 5 V IC – VBE 3 (A) 0.6 2 0.5 0.4 0.3 0.2 1 0.1 0.05 IB = 0.02 A 0 0 2 4 6 8 10 (A) Collector current IC 2 1 0.8 Collector current IC Tc = 100°C 25 −55 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC 1000 10 VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Common emitter IC/IB = 5 DC current gain hFE 100 Tc = 100°C 25 10 −55 Common emitter VCE = 5 V 1 0.001 0.01 0.1 1 10 1 www.DataSheet.co.kr Tc = 100°C 0.1 0.05 0.01 25 −55 0.1 1 10 Collector current IC (A) Collector current IC (A) VBE (sat) – IC 10 10 Common emitter IC/IB = 5 Switching Characteristics IC = 5IB1 2IB1 = −IB2 Pulse width = 20 μs Duty cycle ≤ 1% Tc = 25°C tf tr Base-emitter saturation voltage VBE (sat) (V) Switching time (μs) tstg 1 −55 25 1 Tc = 100°C 0.1 0.01 0.1 1 10 0.1 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) 3 2006-11-10 Datasheet pdf - http://www.DataSheet4U.net/ 2SC5353 Safe Operating Area 10 30 PC – Ta (1) Tc = Ta Infinite heat sink (W) IC max (pulsed)* IC max (continuous) 10 ms* (1) 1 ms* 100 μs* (2) No heat sink Collector power dissipation PC 1 20 (A) 100 ms* Collector current IC 10 0.1 DC operation Tc = 25°C (2) 0 0 40 80 120 160 200 0.01 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.001 1 3 5 10 30 50 100 Ambient temperature Ta (°C) VCEO max 300 500 1000 Collector-emitter voltage VCE (V) www.DataSheet.co.kr 4 2006-11-10 Datasheet pdf - http://www.DataSheet4U.net/ 2SC5353 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the pre.


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