HiPerFET Power MOSFETs
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFM42N20 IXFH/IXFM/I...
Description
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 200 V 200 V 200 V
ID25
RDS(on)
42 A 60mW 50 A 45mW 58 A 40mW
trr £ 200 ns
TO-247 AD (IXFH)
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Symbol VDSS VDGR VGS VGSM ID25 IDM IAR
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 42N20 50N20 58N20 42N20 50N20 58N20 42N20 50N20 58N20
Maximum Ratings 200 200 ±20 ±30 42 50 58 168 200 232 42 50 58 30 5 300 -55 ... +150 150 -55 ... +150 V V V V
G TO-268 (D3) Case Style
(TAB)
A A A A A A A A A mJ V/ns W °C °C °C °C
S
(TAB)
TO-204 AE (IXFM)
S
D G = Gate, S = Source, D = Drain, TAB = Drain
G
EAR dv/dt PD TJ TJM Tstg TL Md Weight
TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g
Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays Advantages Easy to mount with 1 screw (TO-24...
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