MRF421

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF421/D The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40% Intermodulation Distortion @ 100 W (PEP) — IMD = – 30 dB (Min) www.DataSheet4U.com 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR MRF421 100 W (PEP), 30 MHz RF POWER TRANSISTORS NPN SILICON CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Withstand Current — 10 s Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC — PD Tstg Value 20 45 3.0 20 30 290 1.66 – 65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 200 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 200 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, TC = 25°C) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES 20 45 45 3.0 — — — — — — — — — — ...