Ordering number:EN462E
NPN Epitaxial Planar Silicon Transistor
2SC2078
27MHz RF Power Amplifier Applications
Package Di...
Ordering number:EN462E
NPN Epitaxial Planar Silicon
Transistor
2SC2078
27MHz RF Power Amplifier Applications
Package Dimensions
unit:mm 2010C
[2SC2078]
Specifications
JEDEC : TO-220AB EIAJ : SC-46
1 : Base 2 : Collector 3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCER VEBO
IC ICP PC
Tj Tstg
RBE=150Ω Tc=50˚C
Conditions
Ratings 80 75 5 3 5 1.2 10
150 –55 to +150
Unit V V V A A W W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings min typ max
Unit
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
ICBO IEBO hFE
fT Cob VCE(sat) VBE(sat)
VCB=40V, IE=0 VEB=4V, IC=0 VCE=5V, IC=0.5A VCE=10V, IC=0.1A VCB=10V, f=1MHz IC=1A, IB=0.1A IC=1A, IB=0.1A
10 µA
10 µA
25* 200*
100 150
MHz
45 60 pF
0.15 0.6 V
0.9 1.2 V
* : The 2SC2078 are classified by 0.5A hFE as follows : 25 B 50 40 C 80 60 D 120 100 E 200
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result ...