SKW25N120

SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 40lower Eoff compared to previous generation Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter G - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW25N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C 2 C E PG-TO-247-3-21 (TO-247AC) VCE 1200V IC 25A Eoff 2.9mJ Tj 150°C Marking K25N120 Package PG-TO-247-3-21 Symbol VCE IC Value 1200 46 25 Unit V A ICpul s IF 84 84 42 25 IFpul s VGE tSC Ptot 80 ±20 10 313 V µs W VGE = 15V, 100V≤VCC ≤1200V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2_1 Apr 06 Power Semiconductors SKW25N120 Thermal Resista...