SKW20N60HS

SKW20N60HS ^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time – 10 µs Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 20 Eoff 240µJ Tj Marking Package PG-TO-247-3-21 G E PG-TO-247-3-21 Type SKW20N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C 150°C K20N60HS Symbol VCE IC Value 600 36 20 Unit V A Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s 2) ICpul s IF 80 80 40 20 IFpul s VGE tSC Ptot Tj , Tstg Tj(tl) 80 ±20 ±30 10 178 -55...+150 175 260 V µs W °C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short ci...