High Speed IGBT
SKW20N60HS
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High Speed IGBT in NPT-technology
C
• 30% lower Eoff compared to previous generation • Short circuit with...
Description
SKW20N60HS
^
High Speed IGBT in NPT-technology
C
30% lower Eoff compared to previous generation Short circuit withstand time – 10 µs Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 20 Eoff 240µJ Tj Marking Package PG-TO-247-3-21
G E
PG-TO-247-3-21
Type SKW20N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C
150°C K20N60HS Symbol VCE IC
Value 600 36 20
Unit V A
Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s
2)
ICpul s IF
80 80
40 20 IFpul s VGE tSC Ptot Tj , Tstg Tj(tl) 80 ±20 ±30 10 178 -55...+150 175 260 V µs W °C
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short ci...
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