2SB968

Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 ■ Features Possible to solder radiation fin directly to printed circuit board High collector-emitter voltage (Base open) VCEO Large collector power dissipation PC Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1 7.3±0.1 1.8±0.1 0.8 max. 2.5±0.1 2 1 4.6±0.1 3 0.75±0.1 2.3±0.1 1.0±0.1 0.1±0.05 0.5±0.1 (5.3) (4.35) (3.0) ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) www.DataSheet4U.com Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation (TC = 25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −40 −5 −1.5 −3 10 150 −55 to +150 Unit V V V A A W °C °C 1 (1.8) 2 3 1.0±0.2 1: Base 2: Collector 3: Emitter EIAJ: SC-63 U-G1 Package Note) Self-supported type package is also prepared. ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCBO VCEO ICBO ICEO IEBO hFE1 * Conditions IC = −1 mA, IE = 0 IC = −2 mA, IB = 0 VCB = −20 V, IE = 0 VCE = −10 V, IB = 0 VEB = −5 V, IC = 0 VCE = −5 V, IC = −1 A VCE = −5 V, IC = −1...