Power Transistors
2SB967
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification
7.3± 0.1 1.8± 0.1
6.5± 0.1 5.3± 0.1 4.35± 0.1
2.3± 0.1 0.5± 0.1
2.5± 0.1
0.8max
q q q
Possible to solder the radiation fin directly to printed cicuit board Low collector to emitter saturation voltage VCE(sat) Large collector current IC
0.93±0.1
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