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C4769 Dataheets PDF



Part Number C4769
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SC4769
Datasheet C4769 DatasheetC4769 Datasheet (PDF)

Ordering number:EN3665 NPN Triple Diffused Planar Silicon Transistor 2SC4769 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4769] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 w w w . D a t a S h e e t 4 U . c o m 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Speci.

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Ordering number:EN3665 NPN Triple Diffused Planar Silicon Transistor 2SC4769 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4769] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 w w w . D a t a S h e e t 4 U . c o m 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Conditions Ratings 1500 800 6 7 16 3 60 150 –55 to +150 2.0 Unit V V V A A W W ˚C ˚C Tj Tstg Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES VCB=800V, IE=0 VCE=1500V, RBE=0 800 40 130 5 1.5 Conditions Ratings min typ max 10 1.0 Unit µA mA V mA V V VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 VCE(sat) IC=5A, IB=1.7A VBE(sat) IC=5A, IB=1.7A * : The 2SC4769 is classified by 5A hFE as follows : hFE Rank 3 to 1 5 4 to 2 6 5 to 3 8 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12099HA (KT)/N130MH, JK (KOTO) No.3665–1/4 2SC4769 Parameter DC Current Gain Diode Forward Voltage Storage Time Fall Time Symbol hFE1 hFE2 VF tstg tf VCE=5V, IC=1A VCE=5V, IC=5A IEC=7A IC=4A, IB1=0.8A, IC=4A, IB1=0.8A, IB2=–1.6A IB2=–1.6A 0.1 Conditions Ratings min 8 3.0* 8.0* 2.0 3.0 0.2 V µs µs typ max Unit Switching Time Test Circuit www.DataSheet4U.com No.3665–2/4 2SC4769 www.DataSheet4U.com No.3665–3/4 2SC4769 www.DataSheet4U.com Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described pro.


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