Document
Ordering number:EN3665
NPN Triple Diffused Planar Silicon Transistor
2SC4769
Ultrahigh-Definition Color Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode.
Package Dimensions
unit:mm 2039D
[2SC4769]
3.4 16.0 5.0 8.0 5.6 3.1
21.0
22.0
w w w . D a t a S h e e t 4 U . c o m
4.0 2.8 2.0 20.4 1.0 2.0
0.6
1
2
3 3.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25˚C
5.45
5.45
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
Conditions
Ratings 1500 800 6 7 16 3 60 150 –55 to +150
2.0
Unit V V V A A W W
˚C ˚C
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES VCB=800V, IE=0 VCE=1500V, RBE=0 800 40 130 5 1.5 Conditions Ratings min typ max 10 1.0 Unit µA mA V mA V V
VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 VCE(sat) IC=5A, IB=1.7A VBE(sat) IC=5A, IB=1.7A
* : The 2SC4769 is classified by 5A hFE as follows :
hFE Rank
3
to 1
5
4
to 2
6
5
to 3
8
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12099HA (KT)/N130MH, JK (KOTO) No.3665–1/4
2SC4769
Parameter DC Current Gain Diode Forward Voltage Storage Time Fall Time Symbol hFE1 hFE2 VF tstg tf VCE=5V, IC=1A VCE=5V, IC=5A IEC=7A IC=4A, IB1=0.8A, IC=4A, IB1=0.8A, IB2=–1.6A IB2=–1.6A 0.1 Conditions Ratings min 8 3.0* 8.0* 2.0 3.0 0.2 V µs µs typ max Unit
Switching Time Test Circuit
www.DataSheet4U.com
No.3665–2/4
2SC4769
www.DataSheet4U.com
No.3665–3/4
2SC4769
www.DataSheet4U.com
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described pro.