SW630

SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.4 ohm : 9.0 A : 26 nc : 72 W SW630 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. D w w w . D a t a S h e e t 4 U . c o m G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain to Source Voltage Continuous Drain Current (@Tc=25℃) Continuous Drain Current (@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25℃) Derating Factor above 25℃ Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 200 9 6.8 36 ±30 160 7.2 5.0 72 0.57 -55~+150 300 Units V A A A V mJ mJ V/ns W W/℃ ℃ ℃ Thermal Characteristics Value Symbol RθJC RθCS RθJA Units Max 1.73 62.5 ℃/ W ℃/ W ℃/ W Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min - Typ 0.5 - 1/6 REV0.1 04....