TAN350

R.-.101199 TAN 350 350 Watts, 50 Volts, Pulsed Avionics 960 – 1215 MHz GENERAL DESCRIPTION The TAN 350 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55ST Style 1 ABSOLUTE MAXIMUM RATINGS Power Dissipation www.DataSheet4U.com 1450 Device Dissipation @25!C (Pd) Voltage and Current 65 Collector to Base Voltage (BVces) Emitter to Base Voltage (BVebo) 2.0 40 Collector Current (Ic) Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +230 W (At rated pulse condition) V V A !C !C ELECTRICAL CHARACTERISTICS @ 25!C SYMBOL Pout Pin Pg #c VSWR CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 960 – 1215 MHz VCC = 50 Volts PW = 10 "sec DF = 10% F = 1090 MHz MIN 350 70 7.0 38 3:1 7.5 40 TYP MAX UNITS W W dB % FUNCTIONAL CHARACTERISTICS @ 25!C BVebo BVces hFE $jc2 Emitter to Base Breakdown Collector to Emitter Breakdown DC – Current Gain Thermal Resistance Ie = 25 mA Ic = 50 mA Ic = 1A, Vce = 5V 2.0 65 10 .12 !C/W V V GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.GHZ.COM OR CONTAC...