PROCESS
CPS165
Silicon Controlled Rectifier
35 Amp Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization
www.DataSheet4U.com
Glass Passivated Mesa 165 x 165 MILS 8.7 MILS 131 x 91 MILS 31 x 31 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å
GEOMETRY
GRO...
