Silicon Controlled Rectifier Sensitive Gate SCR Chip
PROCESS
CPS041
Silicon Controlled Rectifier
Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thickness Ca...
Description
PROCESS
CPS041
Silicon Controlled Rectifier
Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization
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GLASS PASSIVATED MESA 41 x 41 MILS 8.7 MILS ± 0.6 MILS 18 x 8 MILS 7.1 x 7.1 MILS Al - 45,000Å Au - 10,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER 6,474 PRINCIPAL DEVICE TYPES CS18D BRX49 CS92D CS89M
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (19 -May 2005)
PROCESS
CPS041
Typical Electrical Characteristics
www.DataSheet4U.com
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (19 -May 2005)
...
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