2N5496

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 DESCRIPTION ·With TO-220 package ·High power dissipation APPLICATIONS ·For used in medium power and amplifier applications PINNING www.DataSheet4U.com PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N5490/5494 VCBO Collector-base voltage 2N5492 2N5496 2N5490/5494 VCEO Collector-emitter voltage 2N5492 2N5496 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 60 75 90 40 55 70 5 7 3 50 150 -65~150 V A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5490/5494 VCEO(SUS) Collector-emitter sustioning voltage 2N5492 2N5496 2N5490 Collector-emitter saturation voltage 2N5492 2N5494 2N5496 2N5490 2N5492 VBE Base-emitter on voltage 2N5494 2N5496 2N5492 ICEV Collector cut-off current 2N5490/5494 2N5496 ICER IEBO Collector cut-off current Emitter cut-off current 2N5490 2N5492 hFE DC current gain 2N5494 2N5496 fT Transition frequency SYMBOL 2N5490 2N5492 2N5494 2N5496 CONDITIONS MIN 40 TYP. MAX UNIT IC=0.1A ;IB=0 55 70 V IC=2.0A;IB=0.2A IC=2.5A...