DATA SHEET
SILICON TRANSISTOR
2SD2425
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEE...
DATA SHEET
SILICON
TRANSISTOR
2SD2425
NPN SILICON EPITAXIAL
TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SD2425 is a
transistor featuring high current capacitance in small dimension. This
transistor is ideal for DC/DC converters and motor drivers.
PACKAGE DRAWING (UNIT: mm)
FEATURES
New package with dimensions in between those of small
www.DataSheet4U.com
signal and power signal package
High current capacitance Low collector saturation voltage Complementary
transistor with 2SB1578
QUALITY GRADES
Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
Electrode connection 1. Emitter 2. Collector 3.Base
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg 7.5 cm × 0.7 mm ceramic board mounted
2
Conditions
Ratings 60 60 6.0 5.0
Unit V V V A A A W °C °C
PW ≤ 10 ms, duty cycle ≤ 50 %
7.0 1.0 2.0 150 −55 to +150
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please ch...