2SK3376MFV
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3376MFV
For ECM
Application for Ultra-compact ECM
0.22±0.05 1.2±0.05 0.32±0.05 3 2 0.13±0.05 0.8±0.05
Unit: mm
Absolute Maximum Ratings (Ta=25°C)
Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range S...
