K2370

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK2370 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) φ 3.0 ± 0.2 1.0 15.7 MAX 4 4.7 MAX. 1.5 FEATURES Low On-Resistance 2SK2370: RDS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A) 20.0 ± 0.2 Low Ciss Ciss = 2400 pF TYP. High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage(2SAK2369/2370) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 20 ± 80 140 3.0 150 20 285 V V A A W W ˚C A mJ 1 2 3 19 MIN. 3.0 ± 0.2 2.2 ± 0.2 5.45 1.0 ± 0.2 5.45 4.5 ± 0.2 6.0 0.6 ± 0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) –55 to +150 ˚C MP-88 Drain ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Body Diode Gate Source Document No. TC-2507 (O. D. No. TC-8066) Date Published January 1995 P Printed in Japan © 7.0 2.8 ± 0.1 2SK2369: RDS(on) = 0.35 Ω (VGS = 10 V, ID = 10 A) www.DataSheet4U.com 1995 2SK2369/2SK2370 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-State Resistance SYMBOL RDS(on) MIN. TYP. 0.30 0.32 Gate to Source Cu...