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SPB30N03L Dataheets PDF



Part Number SPB30N03L
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description SIPMOS Power Transistor
Datasheet SPB30N03L DatasheetSPB30N03L Datasheet (PDF)

SPP30N03L SIPMOS® Power Transistor Features • N channel • Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 30 V A RDS(on) 0.018 Ω • Avalanche rated • Logic Level • dv/dt rated www.DataSheet4U.com • 175°C operating temperature Type SPP30N03L SPB30N03L Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P-TO220-3-1 Q67040-S4737-A2 Tube P-TO263-3-2 Q67040-S4143-A3 Tape and Reel Maximum Ratings, at Tj = 25 °C.

  SPB30N03L   SPB30N03L



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SPP30N03L SIPMOS® Power Transistor Features • N channel • Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 30 V A RDS(on) 0.018 Ω • Avalanche rated • Logic Level • dv/dt rated www.DataSheet4U.com • 175°C operating temperature Type SPP30N03L SPB30N03L Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P-TO220-3-1 Q67040-S4737-A2 Tube P-TO263-3-2 Q67040-S4143-A3 Tape and Reel Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 28 120 145 7.5 6 kV/µs mJ Unit A ID TC = 25 °C, 1) TC = 100 °C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 °C Avalanche energy, single pulse ID = 30 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 30 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot T j , Tstg ±14 75 -55... +175 55/175/56 V W °C TC = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 1 Semiconductor Group SPP30N03L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint www.DataSheet4U.com Symbol min. Values typ. max. 2 62 62 40 Unit RthJC RthJA RthJA - K/W @ 6 cm 2 cooling area2) Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 1.6 max. 2 µA 10 100 100 nA Ω 0.023 0.013 0.028 0.018 V Unit V(BR)DSS VGS(th) I DSS 30 1.2 VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage, VGS = VDS ID = 50 µA Zero gate voltage drain current VDS = 30 V, VGS = 0 V, T j = 25 °C VDS = 30 V, VGS = 0 V, T j = 150 °C Gate-source leakage current I GSS RDS(on) - VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, ID = 28 A VGS = 10 V, ID = 28 A 1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 SPP30N03L Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Symbol min. Values typ. 30 970 390 170 13 max. 1220 500 215 20 ns S pF Unit g fs Ciss Coss Crss t d(on) 10 - VDS≥2*ID*RDS(on)max , ID = 30 A Input capacitance www.DataSheet4U.com VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 6.2 Ω Rise time tr - 33 50 VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 6.2 Ω Turn-off delay time t d(off) - 12 18 VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 6.2 Ω Fall time tf - 22 33 VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 6.2 Ω Semiconductor Group 3 SPP30N03L Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 3 13 32 3.9 max. 4.5 20 48 V nC Unit Q gs Q gd Qg V(plateau) - VDD = 24 V, ID = 30 A Gate to drain charge DD www.DataSheet4U.com V = 24 V, ID = 30 A Gate charge total VDD = 24 V, ID = 30 A, VGS = 0 to 10 V Gate plateau voltage VDD = 24 V, ID = 30 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 1.1 32 0.024 30 120 1.7 50 A TC = 25 °C Inverse diode direct current,pulsed TC = 25 °C Inverse diode forward voltage V ns VGS = 0 V, I F = 56 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge 0.036 µC VR = 15 V, IF=l S , diF/dt = 100 A/µs Semiconductor Group 4 SPP30N03L Power Dissipation Drain current Ptot = f (TC) SPP30N03L ID = f (TC ) parameter: VGS ≥ 10 V SPP30N03L 80 W 32 A 60 24 Ptot www.DataSheet4U.com 40 ID 100 120 140 160 °C 190 50 20 16 30 12 20 8 10 4 0 0 20 40 60 80 0 0 20 40 60 80 100 120 140 160 °C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) parameter : D = 0 , T C = 25 °C 10 3 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPP30N03L SPP30N03L K/W A 10 0 tp = 26.0µs Z thJC 100 µs 10 2 ID = V DS /I 10 -1 D DS ( D = 0.50 10 1 ms -2 R on ) 0.20 0.10 0.05 10 1 10 ms 10 -3 single pulse 0.02 0.01 DC 10 0 -1 10 10 -4 -7 10 10 0 10 1 V 10 2 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Semiconductor Group 5 tp SPP30N03L Typ. output characteristics I D = f (VDS) parameter: tp = 80 µs SPP30N03L Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: V GS SPP30N03L 75 A Ptot = 75W 0.10 Ω l kji hg f VGS [V] a 2.5 b c 3.0 c d e 60 55 50 45 www.DataSheet4U.com 40 35 e 0.08 RDS(on) 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 d e f g 0.07 0.06 0.05 0.04 0.03 f ID d h i j k 30 25 20 15 c l 0.02 10 5 a b 0.01 V VGS [V] = c 3.5 d 4.0.


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