Document
SPP30N03L SIPMOS® Power Transistor
Features • N channel
• Enhancement mode
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
30 30
V A
RDS(on) 0.018 Ω
• Avalanche rated • Logic Level • dv/dt rated
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• 175°C operating temperature
Type SPP30N03L SPB30N03L
Package
Ordering Code
Packaging
Pin 1 G
Pin 2 Pin 3 D S
P-TO220-3-1 Q67040-S4737-A2 Tube P-TO263-3-2 Q67040-S4143-A3 Tape and Reel
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 28 120 145 7.5 6 kV/µs mJ Unit A
ID
TC = 25 °C, 1) TC = 100 °C
Pulsed drain current
IDpulse EAS EAR
dv/dt
TC = 25 °C
Avalanche energy, single pulse
ID = 30 A, VDD = 25 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
IS = 30 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 °C
Gate source voltage Power dissipation
VGS Ptot T j , Tstg
±14 75 -55... +175 55/175/56
V W °C
TC = 25 °C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
1
Semiconductor Group
SPP30N03L
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint
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Symbol min.
Values typ. max. 2 62 62 40
Unit
RthJC RthJA RthJA
-
K/W
@ 6 cm 2 cooling area2)
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 1.6 max. 2 µA 10 100 100 nA Ω 0.023 0.013 0.028 0.018 V Unit
V(BR)DSS VGS(th) I DSS
30 1.2
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage, VGS = VDS ID = 50 µA Zero gate voltage drain current
VDS = 30 V, VGS = 0 V, T j = 25 °C VDS = 30 V, VGS = 0 V, T j = 150 °C
Gate-source leakage current
I GSS RDS(on)
-
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 4.5 V, ID = 28 A VGS = 10 V, ID = 28 A
1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air.
Semiconductor Group
2
SPP30N03L
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Symbol min. Values typ. 30 970 390 170 13 max. 1220 500 215 20 ns S pF Unit
g fs Ciss Coss Crss t d(on)
10 -
VDS≥2*ID*RDS(on)max , ID = 30 A
Input capacitance
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VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 6.2 Ω
Rise time
tr
-
33
50
VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 6.2 Ω
Turn-off delay time
t d(off)
-
12
18
VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 6.2 Ω
Fall time
tf
-
22
33
VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 6.2 Ω
Semiconductor Group
3
SPP30N03L
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 3 13 32 3.9 max. 4.5 20 48 V nC Unit
Q gs Q gd Qg V(plateau)
-
VDD = 24 V, ID = 30 A
Gate to drain charge
DD www.DataSheet4U.com
V
= 24 V, ID = 30 A
Gate charge total
VDD = 24 V, ID = 30 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 24 V, ID = 30 A
Reverse Diode Inverse diode continuous forward current
IS I SM VSD t rr Q rr
-
1.1 32 0.024
30 120 1.7 50
A
TC = 25 °C
Inverse diode direct current,pulsed
TC = 25 °C
Inverse diode forward voltage V ns
VGS = 0 V, I F = 56 A
Reverse recovery time
VR = 15 V, IF=IS , diF/dt = 100 A/µs
Reverse recovery charge 0.036 µC
VR = 15 V, IF=l S , diF/dt = 100 A/µs
Semiconductor Group
4
SPP30N03L
Power Dissipation Drain current
Ptot = f (TC)
SPP30N03L
ID = f (TC )
parameter: VGS ≥ 10 V
SPP30N03L
80
W
32
A
60
24
Ptot
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40
ID
100 120 140 160 °C 190
50
20
16
30
12
20
8
10
4
0 0
20
40
60
80
0 0
20
40
60
80
100 120 140 160 °C 190
TC
TC
Safe operating area
Transient thermal impedance
I D = f (V DS)
parameter : D = 0 , T C = 25 °C
10
3
ZthJC = f (tp )
parameter : D = tp /T
10 1
SPP30N03L
SPP30N03L
K/W
A
10 0
tp = 26.0µs
Z thJC
100 µs
10
2
ID
=
V
DS
/I
10 -1
D
DS (
D = 0.50 10
1 ms -2
R
on )
0.20 0.10 0.05
10
1
10 ms
10 -3 single pulse
0.02 0.01
DC 10 0 -1 10 10 -4 -7 10
10
0
10
1
V
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
Semiconductor Group 5
tp
SPP30N03L
Typ. output characteristics
I D = f (VDS)
parameter: tp = 80 µs
SPP30N03L
Typ. drain-source-on-resistance
RDS(on) = f (ID)
parameter: V GS
SPP30N03L
75 A
Ptot = 75W
0.10
Ω
l kji hg f
VGS [V] a 2.5
b c 3.0
c
d
e
60 55 50 45 www.DataSheet4U.com 40 35
e
0.08
RDS(on)
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0
d e f g
0.07 0.06 0.05 0.04 0.03
f
ID
d
h i j k
30 25 20 15
c
l
0.02
10 5
a b
0.01
V
VGS [V] =
c 3.5 d 4.0.