Type
OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converter...
Type
OptiMOS™3 Power-
Transistor
Features
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Avalanche rated
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Type
IPP055N03L G
IPB055N03L G
Product Summary V DS R DS(on),max ID
IPP055N03L G IPB055N03L G
30 V 5.5 mΩ 50 A
Package Marking
PG-TO220-3-1 055N03L
PG-TO263-3 055N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage 1) J-STD20 and JESD22 Rev. 1.04
I D,pulse I AS E AS
dv /dt
V GS
V GS=4.5 V, T C=25 °C
V GS=4.5 V, T C=100 °C T C=25 °C
T C=25 °C
I D=35 A, R GS=25 Ω
I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C
page 1
Value 50 50 50 50 350 50 60
6
±20
Unit A
mJ kV/µs V
2010-01-18
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
IPP055N03L G IPB055N03L G
Value 68
-55 ... 175 55/175/56
Unit W °C
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Ther...