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IPB070N06N G
IPP070N06N G
OptiMOS® Power-Transistor
Features • Low gate charge for fast switching...
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IPB070N06N G
IPP070N06N G
OptiMOS® Power-
Transistor
Features Low gate charge for fast switching applications N-channel enhancement - normal level 175 °C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant
Product Summary V DS R DS(on),max ID
SMDversion
60 6.7 80
V mΩ A
Type
IPB070N06N G
IPP070N06N G
Type IPB066N06N G Package IPP066N06N G Marking
Package P-TO263-3-2 P-TO263-3-2 070N06N P-TO220-3-1
Marking P-TO220-3-1 066N06N 070N06N 066N06N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1) 2)
Value 80 80 320 530 6 ±20
Unit A
I D,pulse E AS dv /dt V GS P tot T j, T stg
T C=25 °C2) I D=80 A, R GS=25 Ω I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C
mJ kV/µs V W °C
T C=25 °C
250 -55 ... 175 55/175/56
Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 127 A. See figure 3
Rev. 1.01
page 1
2006-06-19
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IPB070N06N G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-sourc...