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IPP048N06L G
IPB048N06L G
OptiMOS® Power-Transistor
Features • For fast switching converters and ...
www.DataSheet4U.com
IPP048N06L G
IPB048N06L G
OptiMOS® Power-
Transistor
Features For fast switching converters and sync. rectification N-channel enhancement - logic level 175 °C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant
Product Summary V DS R DS(on),max ID
SMDversion
60 4.4 100
V mΩ A
Type
IPP048N06L
IPB048N06L
Package Marking
P-TO220-3-1 048N06L
P-TO263-3-2 048N06L
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1) 2)
Value 100 100 400 810 6 ±20
Unit A
I D,pulse E AS dv /dt V GS P tot T j, T stg
T C=25 °C2) I D=100 A, R GS=25 Ω I D=100 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C
mJ kV/µs V W °C
T C=25 °C
300 -55 ... 175 55/175/56
Current is limited by bondwire; with an RthJC=0.5 the chip is able to carry 161A See figure 3
Rev. 1.11
page 1
2006-04-20
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IPP048N06L G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V...