IPP048N06LG

www.DataSheet4U.com IPP048N06L G IPB048N06L G OptiMOS® Power-Transistor Features For fast switching converters and sync. rectification N-channel enhancement - logic level 175 °C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 4.4 100 V mΩ A Type IPP048N06L IPB048N06L Package Marking P-TO220-3-1 048N06L P-TO263-3-2 048N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 100 100 400 810 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C2) I D=100 A, R GS=25 Ω I D=100 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 300 -55 ... 175 55/175/56 Current is limited by bondwire; with an RthJC=0.5 the chip is able to carry 161A See figure 3 Rev. 1.11 page 1 2006-04-20 www.DataSheet4U.com IPP048N06L G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V...