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IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25
OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested • ESD Class 1C (HBM)
EIA/JESD22-A114-B
Product Summary V DS R DS(on),max (SMD version) ID 55 24.8 25 V mΩ A
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Ordering Code SP0000-88000 SP0000-87997 SP0000-88001
Marking 3N0625 3N0625 3N0625
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse3) Drain gate voltage2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V DG V GS P tot T j, T stg T C=25 °C T C=25 °C I D=12 A Value 25 23 100 60 55 ±20 48 -55 ... +175 55/175/56 mJ V V W °C Unit A
Rev. 1.0
page 1
2006-04-03
www.DataSheet4U.com
IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25
Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=20 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=15 A V GS=10 V, I D=15 A, SMD version 55 2.1 3.0 4.0 1 µA V 3.3 62 62 40 K/W Values typ. max. Unit
-
1 1 21.6 21.3
100 100 25.1 24.8 nA mΩ
Rev. 1.0
page 2
2006-04-03
www.DataSheet4U.com
IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25
Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode2) Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=25 A, T j=25 °C V R=27.5 V, I F=I S, di F/dt =100 A/µs V R=27.5 V, I F=I S, di F/dt =100 A/µs 0.6 0.9 25 100 1.3 V A Q gs Q gd Qg V plateau V DD=11 V, I D=25 A, V GS=0 to 10 V 14 6 27 7.0 41 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=27.5 V, V GS=10 V, I D=25 A, R G=14.8 Ω V GS=0 V, V DS=25 V, f =1 MHz 1862 283 270 15 27 16 27 ns pF Values typ. max. Unit
Reverse recovery time
t rr
-
38
ns
Reverse recovery charge
1)
Q rr
-
30
nC
Current is limited by bo.