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IPP100N08S2-07 Dataheets PDF



Part Number IPP100N08S2-07
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPP100N08S2-07 DatasheetIPP100N08S2-07 Datasheet (PDF)

www.DataSheet4U.com IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 75 6.8 100 V mΩ A PG-TO220-3-1 PG-TO262-3-1 Type IPB100N08S2-07 IPP100N08S2-07 IPI100N08S2-07 Package PG-TO263-3-2 PG-TO220-3-1 PG-T.

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www.DataSheet4U.com IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 75 6.8 100 V mΩ A PG-TO220-3-1 PG-TO262-3-1 Type IPB100N08S2-07 IPP100N08S2-07 IPI100N08S2-07 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code SP0002-19044 SP0002-19005 SP0002-19041 Marking PN0807 PN0807 PN0807 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D= 80 A Value 100 94 400 810 ±20 300 -55 ... +175 55/175/56 mJ V W °C Unit A Rev. 1.0 page 1 2006-03-03 www.DataSheet4U.com IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=250 µA V DS=75 V, V GS=0 V, T j=25 °C V DS=75 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=80 A, V GS=10 V, I D=80 A, SMD version 75 2.1 3.0 4.0 V 0.5 62 62 40 K/W Values typ. max. Unit Zero gate voltage drain current I DSS - 0.01 1 µA - 1 1 5.8 5.5 100 100 7.1 6.8 nA mΩ Rev. 1.0 page 2 2006-03-03 www.DataSheet4U.com IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=40 V, I F=I S, di F/dt =100 A/µs V R=40 V, I F=I S, di F/dt =100 A/µs 0.9 80 400 1.3 V A Q gs Q gd Qg V plateau V DD=60 V, I D=80 A, V GS=0 to 10 V 25 69 144 5.4 33 120 200 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=40 V, V GS=10 V, I D=80 A, R G=2.2 Ω V GS=0 V, V DS=25 V, f =1 MHz 4700 1260 580 26 51 61 30 ns pF Values typ. max. Unit Reverse recovery time2) t rr - 90 110 ns Reverse recovery charge2) 1) Q rr - 290 360 nC Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 133A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) 3) Defined by design. Not subject to production test. See diagram 13. Qualified at -20V and +20V. 4) 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-03-03 www.DataSheet4U.com IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 1 Power dissipation P tot = f(T C); V GS ≥ 6 V 2 Drain current I D = f(T C); V GS ≥ 10 V 350 120 300 100 250 80 P tot [W] 200 I D [A] 0 50 100 150 200 60 150 40 100 20 50 0 0 0 50 100 150 200 T C [°C] T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 100 0.5 1 µs 10 µs 100 1 ms 100 µs 10-1 0.1 Z thJC [K/W] I D [A] 0.05 10 10-2 0.01 single pulse 1 0.1 1 10 100 10-3 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2006-03-03 www.DataSheet4U.com IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS 300 10 V 7V 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C parameter: V GS 18 250 16 5V 5.5 V 14 200 R DS(on) [mΩ] I D [A] 12 6V 150 6V 10 100 5.5 V 8 8V 50 5V 4.5 V 6 10 V 0 0 2 4 4 6 8 10 0 20 40 60 80 100 120 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 200 180 160 140 8 Typ. Forward transconductance g fs = f(I D); T j = 25°C parameter: g fs 150 125 100 120 100 80 60 40 175 °C g fs [S] 25 °C -55 °C I D [A] 75 50 25 20 0 2 3 4 0 5 6 7 8 0 50 100 150 200 V GS [V] I D [A] Rev. 1.0 page 5 2006-03-03 www.DataSheet4U.com IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 9 Typ. Drain-source on-state resistance R DS(ON) = f(T j) parameter: I D = 80 A; VGS = 10 V 12 10 Typ. gate thre.


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