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IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07
OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2
Product Summary V DS R DS(on),max (SMD version) ID 75 6.8 100 V mΩ A
PG-TO220-3-1
PG-TO262-3-1
Type IPB100N08S2-07 IPP100N08S2-07 IPI100N08S2-07
Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1
Ordering Code SP0002-19044 SP0002-19005 SP0002-19041
Marking PN0807 PN0807 PN0807
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D= 80 A Value 100 94 400 810 ±20 300 -55 ... +175 55/175/56 mJ V W °C Unit A
Rev. 1.0
page 1
2006-03-03
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IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07
Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=250 µA V DS=75 V, V GS=0 V, T j=25 °C V DS=75 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=80 A, V GS=10 V, I D=80 A, SMD version 75 2.1 3.0 4.0 V 0.5 62 62 40 K/W Values typ. max. Unit
Zero gate voltage drain current
I DSS
-
0.01
1
µA
-
1 1 5.8 5.5
100 100 7.1 6.8 nA mΩ
Rev. 1.0
page 2
2006-03-03
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IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07
Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=40 V, I F=I S, di F/dt =100 A/µs V R=40 V, I F=I S, di F/dt =100 A/µs 0.9 80 400 1.3 V A Q gs Q gd Qg V plateau V DD=60 V, I D=80 A, V GS=0 to 10 V 25 69 144 5.4 33 120 200 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=40 V, V GS=10 V, I D=80 A, R G=2.2 Ω V GS=0 V, V DS=25 V, f =1 MHz 4700 1260 580 26 51 61 30 ns pF Values typ. max. Unit
Reverse recovery time2)
t rr
-
90
110
ns
Reverse recovery charge2)
1)
Q rr
-
290
360
nC
Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 133A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos
2) 3)
Defined by design. Not subject to production test. See diagram 13. Qualified at -20V and +20V.
4) 5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-03-03
www.DataSheet4U.com
IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07
1 Power dissipation P tot = f(T C); V GS ≥ 6 V 2 Drain current I D = f(T C); V GS ≥ 10 V
350
120
300
100
250 80
P tot [W]
200
I D [A]
0 50 100 150 200
60
150
40 100 20
50
0
0 0 50 100 150 200
T C [°C]
T C [°C]
3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p
1000
4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T
100
0.5 1 µs 10 µs
100
1 ms
100 µs
10-1
0.1
Z thJC [K/W]
I D [A]
0.05
10
10-2
0.01
single pulse
1 0.1 1 10 100
10-3 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100
V DS [V]
t p [s]
Rev. 1.0
page 4
2006-03-03
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IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07
5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS
300
10 V 7V
6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C parameter: V GS
18
250
16
5V 5.5 V
14 200
R DS(on) [mΩ]
I D [A]
12
6V
150
6V
10
100
5.5 V
8
8V
50
5V 4.5 V
6
10 V
0 0 2 4
4 6 8 10 0 20 40 60 80 100 120
V DS [V]
I D [A]
7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j
200 180 160 140
8 Typ. Forward transconductance g fs = f(I D); T j = 25°C parameter: g fs
150
125
100 120 100 80 60 40
175 °C
g fs [S]
25 °C -55 °C
I D [A]
75
50
25
20 0 2 3 4
0 5 6 7 8 0 50 100 150 200
V GS [V]
I D [A]
Rev. 1.0
page 5
2006-03-03
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IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07
9 Typ. Drain-source on-state resistance R DS(ON) = f(T j) parameter: I D = 80 A; VGS = 10 V
12
10 Typ. gate thre.