IPP120N06NG

www.DataSheet4U.com IPB120N06N G IPP120N06N G OptiMOS® Power-Transistor Features For fast switching converters and sync. rectification N-channel enhancement - normal level 175 °C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 11.7 75 V mΩ A Type IPP120N06N G IPB120N06N G Package Marking P-TO220-3-1 120N06N P-TO263-3-2 120N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 75 53 300 280 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C1) I D=75 A, R GS=25 Ω I D=75 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 158 -55 ... 175 55/175/56 See figure 3 Rev. 1.11 page 1 2006-07-05 www.DataSheet4U.com IPB120N06N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=94 µA V DS=60 V, V GS=0 V, T j=25 °C V ...