IPB160N04S2-03

www.DataSheet4U.com IPB160N04S2-03 OptiMOS® - T Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Product Summary V DS R DS(on),max ID 40 2.9 160 V mΩ A PG-TO263-7-3 Type IPB160N04S2-03 Package PG-TO263-7-3 Ordering Code SP0002-18151 Marking P2N0403 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=80A Value 160 160 640 810 ±20 300 -55 ... 175 55/175/56 mJ V W °C Unit A Rev. 1.0 page 1 2006-03-02 www.DataSheet4U.com IPB160N04S2-03 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=250 µA V DS=40 V, V GS=0 V, T j=25 °C V DS=40 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=60 A, SMD ve...