IPB080N06NG

www.DataSheet4U.com IPB080N06N G IPP080N06N G OptiMOS® Power-Transistor Features Low gate charge for fast switching applications N-channel enhancement - normal level 175 °C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 7.7 80 V mΩ A Type IPB080N06N G IPP080N06N G Package Marking P-TO263-3-2 080N06N P-TO220-3-1 080N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 80 76 320 448 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C2) I D=80 A, R GS=25 Ω I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 214 -55 ... 175 55/175/56 Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 107 A. See figure 3 Rev. 1.01 page 1 2006-05-02 www.DataSheet4U.com IPB080N06N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V ...