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IPB065N06L G
IPP065N06L G
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant
Product Summary V DS R DS(on),max ID 60 6.5 80 V mΩ A
Type
IPB065N06L G
IPP065N06L G
Type IPB063N06L G Package IPP063N06L G Marking
Package PG-TO263-3-2 P-TO263-3-2 065N06L PP-TO220-3-1
Marking PG-TO220-3-1 063N06L 065N06L 063N06L
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1) 2)
Value 80 80 320 530 6 ±20
Unit A
I D,pulse E AS dv /dt V GS P tot T j, T stg
T C=25 °C2) I D=80 A, R GS=25 Ω I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C
mJ kV/µs V W °C
T C=25 °C
250 -55 ... 175 55/175/56
Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 125 A. See figure 3
Rev. 1.1
page 1
2006-05-05
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IPB065N06L G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=180 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=60 V V GS=10 V, I D=80 A V GS=4.5 V, I D=53 A V GS=10 V, I D=80 A, SMD version V GS=4.5 V, I D=53 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=80 A 63 60 1.2 1.6 0.01 -
IPP065N06L G
Unit max.
Values typ.
0.6 62 40
K/W
2 1
V
µA
-
1
100
-
1 5.4 6.5 5.1
100 6.5 8.4 6.2
nA mΩ
6.2 2.2 126
8.1 Ω S
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.1
page 2
2006-05-05
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IPB065N06L G
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
4)
IPP065N06L G
Unit max.
Values typ.
C iss C oss C rss t d(on) tr t d(off) tf V DD=30 V, V GS=4.5V, I D=80 A, R G=1.6 Ω V GS=0 V, V DS=30 V, f =1 MHz
-
3800 890 220 11 21 60 20
5100 1200 330 17 32 90 30
pF
ns
Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=0 V V DD=30 V, I D=80 A, V GS=0 to 10 V
-
13 6 42 49 118 3.5 35
18 8 63 72 157 47
nC
V
IS I S,pulse V SD t rr Q rr
T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs
-
0.95 60 92
80 320 1.3 76 115
A
V ns nC
See figure 16 for gate charge parameter definition
Rev. 1.1
page 3
2006-05-05
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IPB065N06L G
1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V
IPP065N06L G
300
100
250 75 200
P tot [W]
150
I D [A]
0 50 100 150 200
50
100 25 50
0
0 0 50 100 150 200
T C [°C]
T C [°C]
3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
103
1 µs limited by on-state resistance
2
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
100
10 µs 100 µs
10
0.5 1 ms DC 10 ms
Z thJC [K/W]
0.2
I D [A]
10
1
10
-1
0.1
0.05
100
0.02 0.01 single pulse
10-1 10
-1
10-2 10
0
10
1
10
2
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 1.1
page 4
2006-05-05
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IPB065N06L G
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
300
10 V 5.5 V 5.5 V
IPP065N06L G
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
20
3V 3.5 V 4V
250
4.5 V
16
200
150
4V
R DS(on) [mΩ ]
12
I D [A]
8
4.5 V 5V 5.5 V 10 V
100
3.5 V
4
50
3V
0 0
0
0 1 2 3 4 5 0 50 100 150 200
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
180
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
150
150 120 120 90 90
g fs [S]
60 30
175 °C 25 °C
I D [A]
60
30
0 0 1 2 3 4 5
0 0 20 40 60 80
V GS [V]
I D [A]
Rev. 1.1
page 5
2006-05-05
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IPB065N06L G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=80 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
16 2.5
IPP065N06L G.