MT45W2MW16B

www.DataSheet4U.com ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM Features Single device supports asynchronous, page, and burst operations VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–2.25V VCCQ (Option W) Random Access Time: 70ns Burst Mode Write Access Continuous burst Burst Mode Read Access 4, 8, or 16 words, or continuous burst MAX clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 6.5ns @ 104 MHz Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns Low Power Consumption Asynchronous READ < 25mA Intrapage READ < 15mA Initial access, burst READ: (39ns [4 clocks] @ 104 MHz) < 35mA Continuous burst READ < 15mA Standby: 90µA (32Mb), 100µA (64Mb) Deep power-down < 10µA Low-Power Features Temperature Compensated Refresh (TCR) Partial Array Refresh (PAR) Deep Power-Down (DPD) Mode Options VCC Core Voltage Supply: 1.80V – MT45WxMx16BFB VCCQ I/O Voltage 3.0V – MT45WxML16BFB 2.5V – MT45WxMV16BFB 1.8V – MT45WxMW16BFB Timing 60ns access 70ns access 85ns access Frequency 66 MHz 104 MHz Marking W (contact factory) (contact factory) W (contact factory) -70 -85 1 6 MT45W4MW16BFB MT45W2MW16BFB For the latest data sheet, please refer to Micron’s Web site: www.micron.com/datasheets. Figure 1: Ball Assignment 54-Ball FBGA 1 A B C D E F G H J LB# 2 OE# 3 A0 4 A1 5 A2 6 CRE DQ8 UB# A3 A4 CE# DQ0 DQ9 DQ10 A5 A6 DQ1 DQ2 VS...