P6NB50FP

www.DataSheet4U.com STP6NB50 STP6NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP6NB50 STP6NB50FP s s s s s V DSS 500 V 500 V R DS(on) < 1.5 Ω < 1.5 Ω ID 5.8 A 3.4 A TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( ) P t ot dv/dt( 1 ) V ISO T stg Tj March 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating F actor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage T emperature Max. O perating Junction Temperature o TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM Value STP6NB50 STP6NB50FP 500 500 ± 30 5.8 3.7 23.2 100 ...