C1815LT1

www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors C1815LT1 FEATURES Power dissipation PCM : 0.2 W£¨ Tamb=25¡æ£© Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150 ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ otherwise specified£© Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat) TRANSISTOR£¨NPN £© SOT¡ª 23 1. BASE 2. EMITTER 3. COLLECTOR unless Test conditions MIN 60 50 TYP Unit : mm MAX UNIT V V Ic= 100¦Ì A£¬ IE=0 Ic= 0.1mA£¬IB=0 VCB=60 V , IE=0 VCE=50 V , IB=0 VEB= 5V , IC=0 0.1 0.1 0.1 130 400 0.25 1 ¦Ì A ¦Ì A ¦Ì A VCE= 6V, IC= 2mA IC=100 mA, IB= 10m A IC=100 mA, IB= 10m A VCE=10V, I C= 1mA V V Transition frequency fT f=30MHz 80 MHz CLASSIFICATION OF h FE(1) Rank Range L 130- 200 H 200- 400 DEVICE MARKING : C1815LT1=HF www.DataSheet4U.com SOT-23 PACKAGE OUTLINE DIMENSIONS D b ¦È 0.2 E1 E L1 e e1 C A1 A2 Symbol A A1 A2 b c D E E1 e e1 L L1 ¦È 0.300 0° 1.800 0.550REF 0.500 8° 0.012 0° Dimensions In Millimeters Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 0.950TPY 2.000 0.071 0.022REF 0.020 8° Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 Min ...