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BSP321P
SIPMOS® Small-Signal-Transistor
Features • P-Channel • Enhancement mode • Normal level • A...
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BSP321P
SIPMOS® Small-Signal-
Transistor
Features P-Channel Enhancement mode Normal level Avalanche rated Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max ID -100 900 -0.98 V mΩ A
PG-SOT-223
Type BSP321P
Package PG-SOT-223
Tape and Reel Information L6327: 1000 pcs/reel
Marking BSP321P
Lead free Yes
Packing Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=70 °C Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD Class Soldering temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg JESD22-C101-HBM T C=25 °C T C=25 °C I D=-0.98 A, R GS=25 Ω Value -0.98 -0.79 -3.9 57 ±20 1.8 -55 ... 150 1A (250V to 500V) 260 °C 55/150/56 mJ V W °C Unit A
Rev 1.02
page 1
2007-03-27
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BSP321P
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint, steady state 6 cm2 cooling area1), steady state Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 µA V GS(th) V DS=V GS,I D=-380 µA V DS=-100 V, V GS=0 V, T j=25 °C V DS=-100 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20 V, V DS=0 V...