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Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 800W 1) • No forward recovery
P-TO220-2-2.
SDP04S60, SDD04S60 SDT04S60
Product Summary VRRM Qc IF
P-TO252-3-1.
600 13 4
P-TO220-3-1.
V nC A
Type SDP04S60 SDD04S60 SDT04S60
Package P-TO220-3-1. P-TO252-3-1. P-TO220-2-2.
Ordering Code Q67040-S4369 Q67040-S4368 Q67040-S4445
Marking D04S60 D04S60 D04S60
Pin 1 n.c.
PIN 2 C
PIN 3 A
n.c.
A
C
C
Value 4 5.6 12.5 18 40 0.78 600 600 36.5
A
Unit A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz
TC=25°C, tp=10ms
IF IFRMS
Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
IFRM IFMAX ∫i2dt VRRM VRSM Ptot Tj , Tstg
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature
A²s V W °C
-55... +175
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2004-02-11
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Final data
SDP04S60, SDD04S60 SDT04S60
Values min. typ. 35 max. 4.1 62 62 75 50 K/W Unit
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
P-TO263-3-2: @ min. footprint P-TO263-3-2: @ 6 cm2 cooling area 2) P-TO252-3-1: @ min. footprint P-TO252-3-1: @ 6 cm2 cooling area 2)
Symbol
RthJC RthJA RthJA
-
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage
IF=4A, Tj=25°C IF=4A, Tj=150°C
Symbol min. VF IR -
Values typ. max.
Unit
V 1.7 2 15 40 1.9 2.4 µA 200 1000
Reverse current
V R=600V, T j=25°C V R=600V, T j=150°C
1CCM, V = 85VAC, T = 150°C, T =100°C, η = 93%, ∆ I = 30% IN j C IN 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
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2004-02-11
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Final data
SDP04S60, SDD04S60 SDT04S60
Unit max. nC ns pF 150 10 7 -
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Total capacitive charge
V R=400V, IF=4A, diF/dt=200A/µs, T j=150°C
typ. 13 n.a.
Qc trr C
-
Switching time
V R=400V, IF=4A, diF/dt=200A/µs, T j=150°C
Total capacitance
V R=0V, T C=25°C, f=1MHz V R=300V, T C=25°C, f=1MHz V R=600V, T C=25°C, f=1MHz
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Final data
SDP04S60, SDD04S60 SDT04S60
1 Power dissipation Ptot = f (TC)
40
2 Diode forward current IF = f (TC) parameter: Tj≤175 °C
4.5
W
A
30
3.5 3
Ptot
IF
2.5 2 1.5 1 0.5 0 0
25
20
15
10
5
0 0
20
40
60
80
100 120 140
°C 180 TC
20
40
60
80
100 120 140
°C 180 TC
3 Typ. forward characteristic IF = f (VF) parameter: Tj , tp = 350 µs
8
4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100°C, d = tp/T
18
A
-40°C 25°C 100°C 125°C 150°C
W
6
14
PF(AV)
12 10
IF
5
4 8 3 6 2 4 2 0 0
1
d=0.1 d=0.2 d=0.5 d=1
0 0
0.5
1
1.5
2
2.5
V VF
3.5
1
2
3
4
5
A
7
IF(AV)
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2004-02-11
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Final data
SDP04S60, SDD04S60 SDT04S60
5 Typ. reverse current vs. reverse voltage I R=f(VR)
10
2
6 Transient thermal impedance ZthJC = f (t p) parameter : D = t p/T
10 1
SDP04S60
µA
10 1
K/W
10 0
10 0
ZthJC
10 -1
IR
10
-1
25°C 100°C 125°C 150°C
D = 0.50 10
-2
0.20 0.10 single pulse 0.05 0.02 0.01
10
-2
10
-3
10 -3 100
200
300
400
V VR
600
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
7 Typ. capacitance vs. reverse voltage C= f(V R) parameter: TC = 25 °C, f = 1 MHz
125
8 Typ. C stored energy EC=f(V R)
2
µJ pF
1.6 1.4 75
EC
1 2 3 10 V VR
1.2 1
C
50
0.8 0.6
25
0.4 0.2
0 0 10
10
10
0 0
100
200
300
400
V VR
600
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2004-02-11
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Final data
SDP04S60, SDD04S60 SDT04S60
9 Typ. capacitive charge vs. current slope Q c=f(diF /dt) parameter: Tj = 150 °C
14
nC
IF*2
IF IF *0.5
10
Qc
8 6 4 2 0 100 200 300 400 500 600 700 800 A/µs 1000
diF /dt
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2004-02-11
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Final data
SDP04S60, SDD04S60 SDT04S60
P-TO220-3-1 P-TO220-3-1
dimensions symbol min A B C D E F G H K L M N P T 9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95 [mm] max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min 0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374 [inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
2.54 typ. 4.30 4.50 1.17 2.30 1.40 2.72
0.1 typ. 0.1693 0.1772 0.0461 0.0906 0.0551 0.1071
P-TO252 (D-Pak)
dimensions symbol min A B C D E F G H K L M N P R S T U 2.19 0.76 0.90 5.97 9.40 0.46 0.8.