D04S60

www.DataSheet4U.com Final data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior Ideal diode for Power Factor Correction up to 800W 1) No forward recovery P-TO220-2-2. SDP04S60, SDD04S60 SDT04S60 Product Summary VRRM Qc IF P-TO252-3-1. 600 13 4 P-TO220-3-1. V nC A Type SDP04S60 SDD04S60 SDT04S60 Package P-TO220-3-1. P-TO252-3-1. P-TO220-2-2. Ordering Code Q67040-S4369 Q67040-S4368 Q67040-S4445 Marking D04S60 D04S60 D04S60 Pin 1 n.c. PIN 2 C PIN 3 A n.c. A C C Value 4 5.6 12.5 18 40 0.78 600 600 36.5 A Unit A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms IF IFRMS Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX ∫i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature A²s V W °C -55... +175 Page 1 2004-02-11 www.DataSheet4U.com Final data SDP04S60, SDD04S60 SDT04S60 Values min. typ. 35 max. 4.1 62 62 75 50 K/W Unit Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal re...