www.DataSheet4U.com Power Transistors
2SD2178
Silicon NPN epitaxial planar type
For low-frequency output amplification
...
www.DataSheet4U.com Power
Transistors
2SD2178
Silicon
NPN epitaxial planar type
For low-frequency output amplification
7.5±0.2
Unit: mm
4.5±0.2
16.0±1.0
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 50 50 5 2 3 1.5 150 −55 to +150 Unit V V V A A W °C °C
2.5±0.1
Low collector-emitter saturation voltage VCE(sat) Large collector current IC
10.8±0.2
0.65±0.1
0.85±0.1 1.0±0.1 0.8 C
90˚
■ Features
3.8±0.2
0.8 C
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
0.5±0.1 0.8 C 1 2 3 2.05±0.2
0.4±0.1
2.5±0.2
2.5±0.2
1: Emitter 2: Collector 3: Base MT-3-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 2 V, IC = 200 mA VCE = 2 V, IC = 1 A IC = 1 A, IB = 50 mA IC = 1 A, IB = 50 mA VCB = 10 V, IE = −50 mA, ...
