IXGH12N100AU1

Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Pack IXGH 12N100U1 IXGH 12N100AU1 VCES I V C25 CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V Symbol Test Conditions VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient T C = 25°C T C = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 150 W Clamped inductive load, L = 300 mH PC TC = 25°C TJ TJM Tstg Md Weight Mounting torque with screw M3 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 1000 V 1000 V ±20 V ±30 V 24 A 12 A 48 A ICM = 24 A @ 0.8 VCES 100 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.13/10 Nm/lb.in. 6 g 300 °C Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES VGE(th) IC = 3 mA, VGE = 0 V BVCES temperature coefficient IC = 500 mA, VGE = VGE VGE(th) temperature coefficient 1000 0.072 2.5 -0.192 V %/K 5.5 V %/K ICES VCE = 0.8, VCES VGE= 0 V TJ = 25°C TJ = 125°C 300 mA 5 mA IGES VCE = 0 V, VGE = ±20 V ±100 nA VCE(sat) IC = ICE90, VGE = 15 12N100U1 12N100AU1 3.5 V 4.0 V TO-247AD G CE C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features International standard packages JEDEC TO-247 IGBT with antiparallel FRED in one package HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Ex...