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IXGH12N100U1

IXYS Corporation

IGBT


Description
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Pack IXGH 12N100U1 IXGH 12N100AU1 VCES I V C25 CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V Symbol Test Conditions VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient T C = 25°C T C = 90°C TC = 25°C, 1 ms VGE = 15 V,...



IXYS Corporation

IXGH12N100U1

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