www.DataSheet4U.com
Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SC1008
FEATURES Power d...
www.DataSheet4U.com
Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated
Transistors
2SC1008
FEATURES Power dissipation PCM:
TRANSISTOR (
NPN) TO-92
1. EMITTER
0.8
W (Tamb=25℃)
2. BASE
Collector current ICM: 0.7 A Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
3. COLLECTOR
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat)
unless otherwise specified)
Test conditions MIN 80 60 8 0.1 0.1 40 400 0.4 1.1 30 V V MHz TYP MAX UNIT V V V µA µA
Ic= 100µA , IE=0 IC= 10mA , IB=0 IE= 10µA, IC=0 VCB=60 V , IE=0 VEB= 5 V , IC=0
VCE= 2 V, IC=50mA IC= 500mA, IB=50 mA IC=500mA, IB=50mA VCE=10V, IC= 50mA
fT
CLASSIFICATION OF hFE
Rank Range R 40-80 O 70-140 Y 120-240 G 200-400
...
