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AP4511GH
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance
S1 G1 D1/D2
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID
35V 30mΩ 15A -35V 48mΩ -12A
S2 G2
Description
TO-252-4L
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
D1
D2
G1 S1
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating N-channel 35 ±20 15 9 50 10.4 0.083 -55 to 150 -55 to 150 P-channel -35 ±20 -12 -7 -50
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case
3 3
Value Max. Max. 12 110
Units ℃/W ℃/W
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
200222053
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AP4511GH
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 35 1 -
Typ. 0.03 13 11 3 6 12 7 22 6 830 150 110 1.1
Max. Units 30 40 3 1 25 ±100 18 1330 1.7 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Static Drain-Source On-Resistance 2
VGS=10V, ID=8A VGS=4.5V, ID=6A VDS=VGS, ID=250uA VDS=10V, ID=8A
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=35V, VGS=0V VDS=28V, VGS=0V VGS=±20V ID=8A VDS=28V VGS=4.5V VDS=18V ID=1A RG=3.3Ω,VGS=10V RD=18Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=8A, VGS=0V IS=8A, VGS=0V dI/dt=100A/µs
Min. -
Typ. 18 12
Max. Units 1.2 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
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AP4511GH
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C)
o o
Test Conditions VGS=0V, ID=-250uA
2
Min. -35 -1 -
Typ. -0.03 10 10 2 6 10 6 26 7 690 165 130 5
Max. Units 48 70 -3 -1 -25 ±100 19 1100 7.5 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-35V, VGS=0V VDS=-28V, VGS=0V VGS=±20V ID=-6A VDS=-28V VGS=-4.5V VDS=-18V ID=-1A RG=3.3Ω,VGS=-10V RD=18Ω VGS=0V VDS=-25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=-6A, VGS=0V IS=-6A, VGS=0V dI/dt=-100A/µs
Min. -
Typ. 20 12
Max. Units -1.2 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.N-CH , P-CH are same .
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AP4511GH
N-Channel
50 50
T C = 25 o C
40
ID , Drain Current (A)
ID , Drain Current (A)
10V 7.0V 5.0V
T C = 150 o C
40
10V 7.0V
30
30
5.0V
4.5V
20
20
4.5V
10
V G =3.0V
10
V G =3.0V
0 0 1 2 3 4 5
0 0 1 2 3 4 5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
45
1.6
ID=6A
40
T C =25 o C Normalized RDS(ON)
1.4
ID=8A V G =10V
RDS(ON) (mΩ )
35
1.2
30
1.0
25
0.8
20
0.6 2 4 6 8 10 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.4
6
Normalized VGS(th) (V)
4
1.1
IS(A)
T j =150 C
o
T j =25 C
o
2
0.8
0 0 0.2 0.4 0.6 0.8 1 1.2
0.5 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate .