DatasheetsPDF.com

H03N60

Hi-Sincerity Mocroelectronics
Part Number H03N60
Manufacturer Hi-Sincerity Mocroelectronics
Description N-Channel Power Field Effect Transistor
Published Mar 24, 2008
Detailed Description com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : ...
Datasheet PDF File H03N60 PDF File

H03N60
H03N60

Overview
com HI-SINCERITY MICROELECTRONICS CORP.
Spec.
No.
: MOS200602 Issued Date : 2006.
02.
01 Revised Date : 2006.
02.
07 Page No.
: 1/5 H03N60 Series N-Channel Power Field Effect Transistor H03N60 Series Pin Assignment Tab Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)