B1240

www.DataSheet4U.com 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor (−32V, −2A) 2SB1188 / 2SB1182 / 2SB1240 !Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SB1188 0.5±0.1 2SB1182 1.5±0.3 0.2 4.5 + −0.1 1.6±0.1 0.2 1.5 + −0.1 6.5±0.2 0.2 5.1+ −0.1 C0.5 0.2 2.3 + −0.1 0.5±0.1 9.5±0.5 2.5 +0.2 −0.1 4.0±0.3 0.3 5.5+ −0.1 0.9 1.5 (1) 1.0±0.2 (2) (3) 0.4±0.1 1.5±0.1 0.1 0.4 + −0.05 0.75 0.9 0.65±0.1 !Structure Epitaxial planar type PNP silicon transistor 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter Abbreviated symbol: BC∗ 2SB1240 6.8±0.2 2.5±0.2 0.65Max. 1.0 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 14.5±0.5 4.4±0.2 0.9 0.45±0.1 ROHM : ATV ∗ Denotes hFE (1) Emitter (2) Collector (3) Base !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits −40 −32 −5 −2 −3 0.5 PC 2 10 1 Tj Tstg 150 −55~+150 Unit V V V A(DC) A(Pulse) ∗1 W W ∗2 2SB1188 Collector power dissipation 2SB1182 2SB1240 Junction temperature Storage temperature W(TC=25°C) W °C °C ∗3 ∗1 Single pulse, PW=100ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board, 1.7mm thick, collector coppe...