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60NM60

STMicroelectronics

STY60NM60

www.DataSheet4U.com STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh™Power MOSFET TYPE STY60NM60 V...



60NM60

STMicroelectronics


Octopart Stock #: O-613995

Findchips Stock #: 613995-F

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www.DataSheet4U.com STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh™Power MOSFET TYPE STY60NM60 VDSS 600V RDS(on) < 0.055Ω ID 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY’S LOWEST ON-RESISTANCE DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. 2 1 3 Max247 INTERNAL SCHEMATIC DIAGRAM ORDERING INFORMATION SALES TYPE STY60NM60 MARKING Y60NM60 PACKAGE Max247 PACKAGING TUBE July 2003 1/8 www.DataSheet4U.com STY60NM60 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Gate source ESD(HBM-C=100p...




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