Transistors
Power Transistor (80V, 4A)
2SC5574
2SC5574
!Features 1) Low saturation voltage.
(Typ. VCE(sat) = 0.3V at I...
Transistors
Power
Transistor (80V, 4A)
2SC5574
2SC5574
!Features 1) Low saturation voltage.
(Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SA2017.
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature Storage temperature * Single pulse, Pw=100ms
Symbol VCBO VCEO VEBO
IC
PC
Tj Tstg
Limits
100 80 6 4 6 2 30 150 −55 ∼ +150
Unit
V V V A(DC) A(Pulse) * W W(Tc=25°C) °C °C
!External dimensions (Units : mm)
10.0 φ 3.2
4.5 2.8
15.0 12.0 8.0
14.0 5.0
1.2 1.3
0.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
ROHM : TO-220FN
0.75 2.6
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
!Packaging specifications and hFE
Type Package
hFE Code Basic ordering unit (pieces)
2SC5574
TO-220FN EFG − 500
!Electrical characteristics (Ta = 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
∗ Measured using pulse current
Symbol BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat) VBE(sat) hFE
fT Cob
Min.
100 80 6 − − − − 100 − −
Typ.
− − − − − − − − 10 60
Max. − − − 10 10 1
1.5 500
− −
Unit
V V V µA µA...
