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GT60N322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N322
Voltage Resonance Inverter Switching Application
Enhancement mode type High speed : tf = 0.11 μs (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.4 V (typ.) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba packa...
