DatasheetsPDF.com

FZ1200R33KF2 Dataheets PDF



Part Number FZ1200R33KF2
Manufacturers Eupec
Logo Eupec
Description IGBT Power Module
Datasheet FZ1200R33KF2 DatasheetFZ1200R33KF2 Datasheet (PDF)

www.DataSheet4U.com Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KF2 Datenblatt data sheet Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak v.

  FZ1200R33KF2   FZ1200R33KF2


Document
www.DataSheet4U.com Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KF2 Datenblatt data sheet Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Spitzenverlustleistung der Diode maximum power dissipation diode Isolations-Prüfspannung insulation test voltage Teilentladungs-Aussetzspannung partial discharge extinction voltage tP = 1 ms Tj = 25°C Tj = -25°C TC = 80°C TC = 25 °C tP = 1 ms, TC = 80°C VCES 3300 3300 1200 2000 2400 V IC,nom. IC ICRM A A A TC=25°C, Transistor Ptot 14,7 kW VGES +/- 20V V IF 1200 A IFRM 2400 A VR = 0V, tp = 10ms, TVj = 125°C I2t 500.000 A2s Tj = 125°C PRQM 1.200 kW RMS, f = 50 Hz, t = 1 min. VISOL 6.000 V RMS, f = 50 Hz, QPD ≤ 10 pC (acc. to IEC 1287) VISOL 2.600 V Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Gateladung gate charge Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 1200A, VGE = 15V, Tvj = 25°C IC = 1200A, VGE = 15V, Tvj = 125°C IC = 120 mA, VCE = VGE, Tvj = 25°C VGE(th) VCE sat min. 4,2 typ. 3,40 4,30 5,1 max. 4,25 5,00 6,0 V V V f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies - 150 - nF f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres - 8 - nF VGE = -15V ... + 15V, VCE = 1800V VCE = 3300V, VGE = 0V, Tvj = 25°C VCE = 3300V, VGE = 0V, Tvj = 125°C VCE = 0V, VGE = 20V, Tvj = 25°C QG ICES - 22 0,15 60 - 12 150 400 µC mA mA nA IGES - prepared by: Jürgen Göttert approved by: Chr. Lübke; 20.07.99 date of publication : 08.06.99 revision: 3 1 (9) Datenblatt FZ 1200 R 33 KF2 20.07.99 www.DataSheet4U.com Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KF2 Datenblatt data sheet Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 1,2 Ω, CGE = 220nF, Tvj = 25°C VGE = ±15V, RG = 1,2 Ω, CGE = 220nF, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 1,2 Ω, CGE = 220nF, Tvj = 25°C VGE = ±15V, RG = 1,2 Ω, CGE = 220nF, Tvj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 1,2 Ω, CGE = 220nF, Tvj = 25°C VGE = ±15V, RG = 1,2 Ω, CGE = 220nF, Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 1,2 Ω, CGE = 220nF, Tvj = 25°C VGE = ±15V, RG = 1,2 Ω, CGE = 220nF, Tvj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data Modulinduktivität stray inductance module Modul-Leitungswiderstand, Anschlüsse - Chip lead resistance, terminals - chip T = 25°C IC = 1200 A, VCC = 1800V, VGE = 15V RG = 1,2 Ω, CGE = 220 nF, Tvj = 125°C, LS = 40nH IC = 1200 A, VCC = 1800V, VGE = 15V RG = 1,2 Ω, CGE = 220 nF, Tvj = 125°C, LS = 40nH tP ≤ 10µsec, VGE ≤ 15V TVj≤125°C, VCC=2500V, VCEmax=VCES -LsCE ·dI/dt ISC LsCE 6000 10 A nH Eoff 1530 mWs Eon 2880 mWs tf 200 200 ns ns td,off 1550 1700 ns ns tr 250 270 ns ns td,on 370 350 ns ns min. typ. max. RCC’+EE’ - 0,12 - mΩ Charakteristische Werte / Characteristic values Diode / Diode Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 1200 A, VGE = 0V, Tvj = 25°C IF = 1200 A, VGE = 0V, Tvj = 125°C IF = 1200 A, - diF/dt = 3800 A/µsec VR = 1800V, VGE = -10V, Tvj = 25°C VR = 1800V, VGE = -10V, Tvj = 125°C Sperrverzögerungsladung recovered charge IF = 1200 A, - diF/dt = 3800 A/µsec VR = 1800V, VGE = -10V, Tvj = 25°C VR = 1800V, VGE = -10V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 1200 A, - diF/dt = 3800 A/µsec VR = 1800V, VGE = -10V, Tvj = 25°C VR = 1800V, VGE = -10V, Tvj = 125°C Erec 730 1500 mWs mWs Qr 710 1320 µAs µAs IRM 1025 1100 A A VF min. - typ. 2,80 2,80 max. 3,50 3,50 V V 2 (9) Datenblatt FZ 1200 R 33 KF2 20.07.99 www.DataSheet4U.com Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KF2 Datenblatt data sheet Thermische Eigenschaften / Thermal properties min. Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resist.


ECUV1Hxxxxxx FZ1200R33KF2 LD87C52


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)