Document
www.DataSheet4U.com
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KF2
Datenblatt data sheet
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Spitzenverlustleistung der Diode maximum power dissipation diode Isolations-Prüfspannung insulation test voltage Teilentladungs-Aussetzspannung partial discharge extinction voltage tP = 1 ms Tj = 25°C Tj = -25°C TC = 80°C TC = 25 °C tP = 1 ms, TC = 80°C VCES 3300 3300 1200 2000 2400 V
IC,nom. IC ICRM
A A A
TC=25°C, Transistor
Ptot
14,7
kW
VGES
+/- 20V
V
IF
1200
A
IFRM
2400
A
VR = 0V, tp = 10ms, TVj = 125°C
I2t
500.000
A2s
Tj = 125°C
PRQM
1.200
kW
RMS, f = 50 Hz, t = 1 min.
VISOL
6.000
V
RMS, f = 50 Hz, QPD ≤ 10 pC (acc. to IEC 1287)
VISOL
2.600
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Gateladung gate charge Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 1200A, VGE = 15V, Tvj = 25°C IC = 1200A, VGE = 15V, Tvj = 125°C IC = 120 mA, VCE = VGE, Tvj = 25°C VGE(th) VCE sat
min.
4,2
typ.
3,40 4,30 5,1
max.
4,25 5,00 6,0 V V V
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Cies
-
150
-
nF
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Cres
-
8
-
nF
VGE = -15V ... + 15V, VCE = 1800V VCE = 3300V, VGE = 0V, Tvj = 25°C VCE = 3300V, VGE = 0V, Tvj = 125°C VCE = 0V, VGE = 20V, Tvj = 25°C
QG ICES
-
22 0,15 60 -
12 150 400
µC mA mA nA
IGES
-
prepared by: Jürgen Göttert approved by: Chr. Lübke; 20.07.99
date of publication : 08.06.99 revision: 3
1 (9)
Datenblatt FZ 1200 R 33 KF2 20.07.99
www.DataSheet4U.com
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KF2
Datenblatt data sheet
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 1,2 Ω, CGE = 220nF, Tvj = 25°C VGE = ±15V, RG = 1,2 Ω, CGE = 220nF, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 1,2 Ω, CGE = 220nF, Tvj = 25°C VGE = ±15V, RG = 1,2 Ω, CGE = 220nF, Tvj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 1,2 Ω, CGE = 220nF, Tvj = 25°C VGE = ±15V, RG = 1,2 Ω, CGE = 220nF, Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 1,2 Ω, CGE = 220nF, Tvj = 25°C VGE = ±15V, RG = 1,2 Ω, CGE = 220nF, Tvj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data Modulinduktivität stray inductance module Modul-Leitungswiderstand, Anschlüsse - Chip lead resistance, terminals - chip T = 25°C IC = 1200 A, VCC = 1800V, VGE = 15V RG = 1,2 Ω, CGE = 220 nF, Tvj = 125°C, LS = 40nH IC = 1200 A, VCC = 1800V, VGE = 15V RG = 1,2 Ω, CGE = 220 nF, Tvj = 125°C, LS = 40nH tP ≤ 10µsec, VGE ≤ 15V TVj≤125°C, VCC=2500V, VCEmax=VCES -LsCE ·dI/dt ISC LsCE 6000 10 A nH Eoff 1530 mWs Eon 2880 mWs tf 200 200 ns ns td,off 1550 1700 ns ns tr 250 270 ns ns td,on 370 350 ns ns
min.
typ.
max.
RCC’+EE’
-
0,12
-
mΩ
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 1200 A, VGE = 0V, Tvj = 25°C IF = 1200 A, VGE = 0V, Tvj = 125°C IF = 1200 A, - diF/dt = 3800 A/µsec VR = 1800V, VGE = -10V, Tvj = 25°C VR = 1800V, VGE = -10V, Tvj = 125°C Sperrverzögerungsladung recovered charge IF = 1200 A, - diF/dt = 3800 A/µsec VR = 1800V, VGE = -10V, Tvj = 25°C VR = 1800V, VGE = -10V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 1200 A, - diF/dt = 3800 A/µsec VR = 1800V, VGE = -10V, Tvj = 25°C VR = 1800V, VGE = -10V, Tvj = 125°C Erec 730 1500 mWs mWs Qr 710 1320 µAs µAs IRM 1025 1100 A A VF
min.
-
typ.
2,80 2,80
max.
3,50 3,50 V V
2 (9)
Datenblatt FZ 1200 R 33 KF2 20.07.99
www.DataSheet4U.com
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 33 KF2
Datenblatt data sheet
Thermische Eigenschaften / Thermal properties
min.
Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resist.