BUK9606-55B

www.DataSheet4U.com BUK95/96/9E06-55B N-channel TrenchMOS™ logic level FET Rev. 03 — 30 November 2004 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance. 1.2 Features s TrenchMOS™ technology s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 679 mJ s ID ≤ 75 A s RDSon = 5.1 mΩ (typ) s Ptot ≤ 258 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain (D) 123 3 [1] Simplified outline mb mb Symbol mb D G mbb076 S 2 1 1 2 3 SOT226 (I2-PAK) SOT404 (D2-PAK) SOT78 (TO-220AB) [1] It is not possible to make a connection to pin 2 of the SOT404 package. www.DataSheet4U.com Philips Semiconductors BUK95/96/9E06-55B N-channel TrenchMOS™ logic level FET 3. Ordering information Table 2: Ordering information Package Name BUK9506-55B BUK9606-55B BUK9E06-55B TO-220AB D2-PAK I2-PAK Description Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number Plastic single-ended surface mounted package (Philips version of D2-PAK); SOT404 3 leads (one lead cropped) Plastic single-ended package (Philips ...